Evaluating the Shielding Effectiveness of Nonmagnetic Shields
Antonio Orlandi and Tommaso Scozzafava
A mathematical circuit model is described and its calculated
effects compared with experimental results. The model focuses
on shields in the power frequency range.
No doubt the best materials for electromagnetic shields will
have both high conductivity and high permeability, as does,
for instance, Mumetal. Unfortunately, these types of materials
are very expensive. Employment of nonmagnetic but cheaper materials
to obtain the desired shielding effectiveness is generally felt
to be acceptable in the light of this cost obstacle. This article
develops that approach. It presents and discusses a circuit
model along with experimental results.
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Figure 1. Schematic setup of the
physical shield model.
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Figure 2. Physical-geometric model of the solenoids
and the shield in the shield model of Figure 1.
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In the power frequency range (50 or 60 Hz and their lower harmonics),
a well-known way of suitably modeling shielding problems involves
a pair of coaxial solenoids with a shielding plate inserted
between, as shown in Figure 1. In the transmitting solenoid
T a sinusoidal current, IG, of constant
amplitude and frequency is impressed. The no-load induced voltage
VR is calculated or measured at the terminals
of the receiving solenoid R. The ratio, or the related attenuation,
of the induced voltage when the shield is on (VR
= Vsh) to the same voltage when the shield
is off (VR = V0)
can be correlated to the effectiveness of the shield.
A circuit model of the device is obtainable by decomposing
both the solenoids and the shield into a set of circular coaxial
parallel turns, mutually coupled, as schematized in Figure 2,
where, for the sake of clarity, the transmitting solenoid T
has only three turns, the receiving solenoid R has only four
turns, and the shield S is decomposed into only five turns.
In sinusoidal steady state, the phasors are as follows:
IG = the impressed current in the solenoid
T.
Is = the induced currents (s = 15)
in the turns composing the shield.
VR = the induced voltages (R = 14)
in the turns of the solenoid R.
(The numerical values of the indexes refer to the deconstruction
in Figure 2.)
The circuit parameters of the equivalent network (their calculus
is developed and discussed below) are:
Rs = the resistances of the turns composing
the shield.
Ls = the total (internal and external)
self-inductance of the aforesaid turns.
ms's" = the mutual inductances between the s'th
and the s"th turns of the shield, where s' is not equal to s".
Mst = the mutual inductances between
the sth turn of
the shield and the tth turn (t = 13) of the transmitting
solenoid T.
mrs = the mutual inductances between
the rth turn of the solenoid R and the sth turn of the shield.
Mrt = the mutual inductances between
the rth turn of the receiving solenoid R and the tth turn of
the transmitting one.
The system of equations governing the unknown currents Is
in the shield is (with reference to Figure 2):
R1I1 + j
(
L1I1 + m12I2 + m13I3
+ m14I4 + m15I5
) + j
( IG ( M11 + M12 + M13
) = 0
R2I2 + j
( m21I1 + L2I2 +
m23I3 + m24I4 +
m25I5 ) + j
( IG ( M21
+ M22 + M23 ) = 0
R3I3 + j
( m31I1 + m32I2
+ L3I3 + m34I4 +
m35I5 ) + j
( IG ( M31
+ M32 + M33 ) = 0
R4I4 + j
( m41I1 + m42I2
+ m43I3 + L4I4+
m45I5 ) + j
( IG ( M41
+ M42 + M43 ) = 0
R5I5 + j
( m51I1 + m52I2
+ m53I3 + m54I4
+ L5I5 ) + j
( IG ( M51
+ M52 + M53 ) = 0
Once the currents Is are calculated,
the induced voltages VR in the four turns
of the solenoid R are easily obtainable through a second system
of equations.
V1 = j
[(m11I1
+ m12I2 + m13I3
+ m14I4 + m15I5
) + j
( IG ( M11 + M12 + M13
)]
V2 = j
( [(m21I1
+ m22I2 + m23I3
+ m24I4 + m25I5
) + j
( IG ( M21
+ M22 + M23 )]
V3 = j
( [(m31I1
+ m32I2 + m33I3
+ m34I4 + m35I5
) + j
( IG ( M31
+ M32 + M33 )]
V4 = j
( [(m41I1
+ m42I2 + m43I3
+ m44I4 + m45I5
) + j
( IG ( M41
+ M42 + M43 )]
Also, the voltage available at the terminals of the solenoid
R, when the shield is on, can be calculated as Vsh
= V1 + V2 + V3
+ V4. When the shield is off, System 2
is replaced by the equations
V'1 = j
( IG ( M11
+ M12 + M13 )
V'2 = j
( IG ( M21
+ M22 + M23 )
V'3 = j
( IG ( M31
+ M32 + M33 )
V'4 = j
( IG ( M41
+ M42 + M43 )
(3)
and the corresponding available V0 voltage
is the sum of V'1 + V'2
+ V'3 + V'4.
This procedure can be generalized by introducing the following
matrices and vectors:

in which T is the number of turns of the solenoid T, R is the
number of turns of the solenoid R, and S is the minimum number
of turns of the shield S necessary to obtain a large enough
disk, namely, one encompassing within it essentially all of
the magnetic flux produced by the solenoid T.
Thus, if ZS is posited as representing
RS + j
(LS, then
the equation system 1 can be characterized as
ZS IS + j
( IG
MST = 0
and the currents induced in the shield are obtainable via the
expression
IS = j
( IG
ZS1MST.
Then systems 2 and 3 become
VR = j
( (mRS IS
+ IG MRT) and
V'R = j
( IG MRT
respectively, and the induced voltages at the terminals of
the solenoid R have respectively the values

when the shield is on and
when the shield is off. The corresponding attenuation A is
calculated as 20 log(V0/Vsh).
This mathematical model accommodates a wide choice of
geometrical and electrical parameters and can fit a large variety
of physical models of the type depicted in Figure 1.
The basic physical model used in the study reported here
is depicted in Figure 3. There are two parallel coaxial turns
of radius r1 and r2, whose conductors
have circular sections of radius
1
and
2, respectively;
their planes are a distance d from each other. The parameters
that must be computed are the mutual- and self-induction coefficients.
With regard to the former, it is well known that, if
the radii
1
and
2 are
negligible with respect to the radii r1 and r2
and to the distance d, then the mutual-induction coefficient
M of the two turns has the value
where E1(k) and E2(k)
are respectively the first- and second-kind Legendre's elliptic
integrals:
with
All the elements of the matrices MST,
mRS, and MRT and
all the nondiagonal elements of the matrix LS
were computed by means of Equation 4. These were also calculated
when the turns were too close each other.
With regard to the total (internal and external) self-induction
L of a single turn whose radius is r and whose conductor has
an inner radius
(with
much less than r),
a good approximation may be obtained through application of
the formula
(5)

Again, all the diagonal elements of the matrix LS
were computed. When the condition
(
<< r was unfulfilled, as in the case of the more-internal
rings of the shield (see Figure 2), it was also computed. Moreover,
the square sections of the rings were considered as circular
sections of equal area. In the proximity of its axis, the shield
so decomposed does not comply with the geometric constraints
imposed on various radii and distances for Equations 4 and 5
to be valid, but the current field density in this area is very
weak, as the magnetic flux, here linked by the more-internal
turns, is very small.
Finally, the turn resistances of the diagonal matrix
RS were evaluated by application of the
formula for dc resistance.
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| Figure 3. Geometric references for a pair of parallel
coaxial turns in the basic physical shield model. |
An experimental device was set up in order to check both
the circuit model described above and the effectiveness of the
shielding properties of various plates with different geometric
and electric characteristics. This device was formed of:
A transmitting solenoid T with a length of 78 mm (LT)
and radius of 42 mm (RT), composed of 36 turns (T)
whose conductors had a diameter
2
1
of 2 mm, and carried an impressed sinusoidal current, IG,
of 3 A (rms) of frequency f, chosen to be varied over the range
501000 Hz (a range large enough to take into account the
usual distortions of industrial waveformsso that the 20th
harmonic could be reachedbut narrow enough that a penetration
depth great enough with respect to the shield thickness could
be obtained).
A receiving solenoid R of length LR =
LT and radius RR =RT, with
R = T turns whose conductors had a diameter 2
2
of 2 mm. (Its distance D from the solenoid T was 10 mm,
and the voltages Vsh and V0 were measurable
at its open terminals.)
A shielding plate of aluminum with a thickness
s of 1.5 mm and resistivity of 30.0 n
m,
which could be inserted orthogonally in the space separating
the solenoids, its dis-tances from the solenoids T and R (deliberately
made the same) being respectively DT and DR,
so that D = DT + s + DR. (It is important
to note that, at a frequency of 1000 Hz, the aluminum
skin depth is nearly twice the thickness of this shield.)
In order to carry out the calculations whose results
are displayed in Table I, the shield was decomposed into S =
40 rings of square sections, whose sides equaled the shield
thickness. So, 65 mm was chosen for the value of the external
radius of the bigger ring and 15 mm for the value of the internal
radius of the smaller one. The previously mentioned weakness
of the fields in the central part of the shield justifies this
choice, as the experimental data confirm.
Table I compares mathematical and experimental results.
In the last column, the disagreement
between the two approachesdue to inaccuracies of both the
mathematical model and the measurementsis given as an algebraic
difference of attenuations. Note that the calculated attenuation
is always lower than the measured one, that is, that a design
employing the proposed model suggests that actual shielding
may be more effective than modeled values.
Taking into account all the noted inaccuracies of the
model (the not-always-fulfilled geometric conditions in Equations
4 and 5 and the formal introduction into the model of a central
hole not existing in the real shield), the results in the
column of Table I seem acceptable. Therefore, this approach
is basically correct.
Because the unavoidable inaccuracies chiefly relate to
the decomposition of the shield, the model can be improved by
decomposing shield thickness into two or more layers. This is
only a matter of computing time and memory. Moreover, such further
decomposition allows not only a better approximation of the
actual case by employing Equations 4 and 5, but also the possibility
of an upper limit for the excitation frequency, as the thickness
of the layers remains negligible with respect to the skin depth.
1. FW Grover, Inductance Calculations (New York: Dover, 1988).
Antonio Orlandi and Tommaso Scozzafava are on the faculty
of the Department of Electrical Engineering of the University
of L'Aquila in Poggio di Roio, Italy. They can be reached at
orlandi@ing.univaq.it and
tosco@ing.univaq.it, respectively.